AS58C1001 Datasheet, Austin Semiconductor

! ! High speed: 150, 200, and 250ns Data Retention: 10 Years ! Low power dissipation, active current (20mW/MHz (TYP)), standby current (100µW(MAX)) ! Single +5V (+10%) p.

Data retention is specified for 10 years and erase/write endurance is guaranteed to a minimum of 10,000 cycles in the P.